Metrology

Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography

[+] Author Affiliations
Nobuhiro Okai, Keiichiro Hitomi, Shoji Hotta, Atsuko Yamaguchi, Junichi Tanaka

Research and Development Group, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

Erin Lavigne, Scott Halle

IBM Semiconductor Research and Development Center, 257 County Road, 156, Albany, New York 12205, United States

Shunsuke Koshihara

Hitachi High-Technologies Corporation, 882 Ichige, Hitachinaka-shi, Ibaraki-ken 312-8503, Japan

Todd Bailey

IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States

J. Micro/Nanolith. MEMS MOEMS. 15(4), 044001 (Oct 12, 2016). doi:10.1117/1.JMM.15.4.044001
History: Received June 15, 2016; Accepted August 31, 2016
Text Size: A A A

Abstract.  A methodology to determine the optimum measurement condition of extreme ultraviolet (EUV) resist patterns in a critical dimension scanning electron microscope has been established. Along with many parameters that need to be optimized simultaneously, there are conflicting requirements of small resist shrinkage and high measurement precision. To overcome these difficulties, we have developed a methodology for ArF resist patterns from shrinkages and precisions predicted by the Taguchi method. In this study, we examined the extendibility of the methodology to sub-20 nm EUV resist patterns. The predicted shrinkage by the Taguchi method for an 18 nm EUV resist pattern showed a large prediction error due to its different dependence on acceleration voltage from ArF, so we used the shrinkage curve to predict shrinkage instead of the Taguchi method, as shrinkage depends only on irradiated electron dose. In contrast, precision can be predicted well by the Taguchi method as with ArF. We propose a methodology that consists of separate prediction procedures for shrinkage and precision using the shrinkage curve and Taguchi method, respectively. The proposed method was applied to an 18-nm EUV resist pattern. The optimum measurement condition with shrinkage of 1.5 nm and precision of 0.12 nm was determined.

Figures in this Article
© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Nobuhiro Okai ; Erin Lavigne ; Keiichiro Hitomi ; Scott Halle ; Shoji Hotta, et al.
"Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 15(4), 044001 (Oct 12, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.4.044001


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.