Lithography

Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis

[+] Author Affiliations
Sascha Brose, Jenny Tempeler, Serhiy Danylyuk, Peter Loosen

RWTH Aachen University, Jülich Aachen Research Alliance-Fundamentals of Future Information Technology, Chair for the Technology of Optical Systems, Steinbachstrasse 15, Aachen 52074, Germany

Larissa Juschkin

RWTH Aachen University, Jülich Aachen Research Alliance-Fundamentals of Future Information Technology, Chair for the Experimental Physics of EUV, Steinbachstrasse 15, Aachen 52074, Germany

Research Center Jülich, Peter Grünberg Institute 9, Jülich Aachen Research Alliance-Fundamentals of Future Information Technology, Wilhelm-Johnen-Straße, Jülich 52428, Germany

J. Micro/Nanolith. MEMS MOEMS. 15(4), 043502 (Oct 17, 2016). doi:10.1117/1.JMM.15.4.043502
History: Received August 11, 2016; Accepted September 16, 2016
Text Size: A A A

Abstract.  The main purpose of this work is the experimental determination of the process window for achromatic Talbot lithography with partially coherent extreme ultraviolet (EUV) radiation. This work has been performed using the EUV laboratory exposure tool. It consists of a discharge produced plasma source with a direct beam path to a phase-shifting transmission mask, avoiding losses due to additional optical components, the photoresist-coated wafer, and a positioning system for each component. Both the source and the mask are optimized for 11-nm wavelength. The process window has been identified by a systematic analysis of several exposure series. The optimization of exposure parameters resulted in 50-nm half-pitch of the wafer features using a transmission mask with a rectangular dot array of 70-nm half-pitch. The depth of field is found to be 20  μm, and it can be extended by spatial filtering. The exposure dose and mask–wafer distance are varied around their optimal values to estimate the process window, using defectivity of the pattern as a control parameter.

Figures in this Article
© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Sascha Brose ; Jenny Tempeler ; Serhiy Danylyuk ; Peter Loosen and Larissa Juschkin
"Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis", J. Micro/Nanolith. MEMS MOEMS. 15(4), 043502 (Oct 17, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.4.043502


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Journal Articles

Related Book Chapters

Topic Collections

PubMed Articles
Advertisement


 

  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.