Metrology

Contour metrology using critical dimension atomic force microscopy

[+] Author Affiliations
Ndubuisi G. Orji, Ronald G. Dixson, András E. Vladár, Michael T. Postek

National Institute of Standards and Technology, Engineering Physics Division, Physical Measurement Laboratory (PML), 100 Bureau Drive, Gaithersburg, Maryland 20899, United States

Boon Ping Ng

Singapore Institute of Manufacturing Technology, (SIMTECH), 71 Nanyang Drive, Singapore 638075, Singapore

J. Micro/Nanolith. MEMS MOEMS. 15(4), 044006 (Dec 15, 2016). doi:10.1117/1.JMM.15.4.044006
History: Received July 29, 2016; Accepted November 23, 2016
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Abstract.  The critical dimension atomic force microscopy (CD-AFM) has been proposed as an instrument for contour measurement and verification since its capabilities are complementary to the widely used scanning electron microscopy (SEM). Although data from CD-AFM are three dimensional (3-D) in structure, the planar two-dimensional data required for contour metrology are not easily extracted from CD-AFM data. This is largely due to the limitations of the CD-AFM method for controlling the tip position and scanning, in which the relevant sidewall data are only obtained in one lateral axis. To use CD-AFM for contour metrology, the extracted profiles must include actual sidewall data from both lateral axes. Using two images acquired from orthogonal scan directions, profile extraction, and a method to combine those profiles, a technique for obtaining contours with the CD-AFM is developed. The main sources of error for this technique are described. The contours derived from CD-AFM were compared with those obtained using the SEM. Our results show that CD-AFM has the potential to make important contributions to semiconductor contour metrology.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Ndubuisi G. Orji ; Ronald G. Dixson ; Boon Ping Ng ; András E. Vladár and Michael T. Postek
"Contour metrology using critical dimension atomic force microscopy", J. Micro/Nanolith. MEMS MOEMS. 15(4), 044006 (Dec 15, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.4.044006


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