Lithography

Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition

[+] Author Affiliations
Anuja De Silva, Indira Seshadri, Kisup Chung, Abraham Arceo, Luciana Meli, Brock Mendoza, Yasir Sulehria, Yiping Yao, Madhana Sunder, Hoa Truong, Shravan Matham, Ruqiang Bao, Heng Wu, Nelson M. Felix, Sivananda Kanakasabapathy

IBM Semiconductor Technology Research, Albany, New York, United States

J. Micro/Nanolith. MEMS MOEMS. 16(2), 023504 (May 23, 2017). doi:10.1117/1.JMM.16.2.023504
History: Received March 5, 2017; Accepted April 28, 2017
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Abstract.  With the increasing prevalence of complex device integration schemes, trilayer patterning with a solvent strippable hardmask can have a variety of applications. Spin-on metal hardmasks have been the key enabler for selective removal through wet strip when active areas need to be protected from dry etch damage. As spin-on metal hardmasks require a dedicated track to prevent metal contamination and are limited in their ability to scale down thickness without compromising on defectivity, there has been a need for a deposited hardmask solution. Modulation of film composition through deposition conditions enables a method to create TiO2 films with wet etch tunability. This paper presents a systematic study on development and characterization of plasma-enhanced atomic layer deposited (PEALD) TiO2-based hardmasks for patterning applications. We demonstrate lithographic process window, pattern profile, and defectivity evaluation for a trilayer scheme patterned with PEALD-based TiO2 hardmask and its performance under dry and wet strip conditions. Comparable structural and electrical performance is shown for a deposited versus a spin-on metal hardmask.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Anuja De Silva ; Indira Seshadri ; Kisup Chung ; Abraham Arceo ; Luciana Meli, et al.
"Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition", J. Micro/Nanolith. MEMS MOEMS. 16(2), 023504 (May 23, 2017). ; http://dx.doi.org/10.1117/1.JMM.16.2.023504


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