Metrology

High-precision CD measurement using energy-filtering SEM techniques

[+] Author Affiliations
Daisuke Bizen, Makoto Sakakibara

Hitachi Ltd., Kokubunji-shi, Tokyo, Japan

Makoto Suzuki, Yoshinori Momonoi, Hajime Kawano

Hitachi High-Technologies Corporation, Hitachinaka-shi, Ibaraki, Japan

J. Micro/Nanolith. MEMS MOEMS. 16(2), 024004 (Jun 29, 2017). doi:10.1117/1.JMM.16.2.024004
History: Received April 5, 2017; Accepted June 12, 2017
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Abstract.  Voltage contrast (VC) images obtained using an energy filter (EF) were used to measure the bottom surface of high-aspect-ratio structures. The VC images obtained using the conventional EF were sensitive to variations in wafer potential. Since CD-SEM metrology requires precise EF voltage control when using VC images, we developed an EF voltage correction method to be used at each measurement point. Consequently, bottom-edge measurement, independent of the wafer potential fluctuations, was achieved using the newly developed EF. Our developed technique is effective for CD-SEM metrology using VC images.

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© 2017 Society of Photo-Optical Instrumentation Engineers

Citation

Daisuke Bizen ; Makoto Sakakibara ; Makoto Suzuki ; Yoshinori Momonoi and Hajime Kawano
"High-precision CD measurement using energy-filtering SEM techniques", J. Micro/Nanolith. MEMS MOEMS. 16(2), 024004 (Jun 29, 2017). ; http://dx.doi.org/10.1117/1.JMM.16.2.024004


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