Creating efficient nano-gratings buried in silicon through laser nano-lithography

Rana Asgari Sabet; Alperen Saltık; Onur Tokel

doi:10.1117/12.2649043

17 March 2023 Creating efficient nano-gratings buried in silicon through laser nano-lithography

Rana Asgari Sabet, Alperen Saltık, Onur Tokel

Proceedings Volume PC12408, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII; PC124080K (2023) https://doi.org/10.1117/12.2649043
Event: SPIE LASE, 2023, San Francisco, California, United States

Abstract

The first successful nano-photonics element deep inside the silicon is created. This was achieved by creating nanoscale and high-aspect-ratio laser-written modifications inside Si, without altering the wafer surfaces. We exploit Bessel beams, in order to create 700-nm thick subsurface planes of 250 µm axial length, arrayed and layered to increase device efficiency. The length of modifications is controlled by precise axial stitching of individual subsurface lithographic layers. The maximum efficiency at the incident angle, satisfying the Bragg condition, is measured 85% for the two-layer grating, and its angular sensitivity is recorded, with a strong agreement between experiment and theory.

Conference Presentation

Citation Download Citation

Rana Asgari Sabet, Alperen Saltık, and Onur Tokel "Creating efficient nano-gratings buried in silicon through laser nano-lithography", Proc. SPIE PC12408, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII, PC124080K (17 March 2023); https://doi.org/10.1117/12.2649043

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KEYWORDS

Silicon

Semiconductor lasers

Bragg gratings

Control systems

Lithography

Nanolithography

Nanophotonics

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