Presentation
30 April 2023 Mirror-based EUV interference lithography: one step closer to the ultimate resolution
Author Affiliations +
Abstract
EUV interference lithography (EUV-IL) plays an essential role in developing photoresist materials for EUV lithography. Hitherto, the highest resolution has been achieved by diffraction gratings positioned on thin transparent membranes. Yet, these gratings are tied in with critical fabrication challenges when aiming towards the ultimate resolution at the sub-10 nm half-pitch regime. To this end, we present an EUV-IL setup based on light reflection upon two low-absorption mirrors. Combined with brilliant and coherent synchrotron light, this Lloyd’s mirror-inspired device delivers single-digit HP patterning with remarkable efficiency and throughput.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Iason Giannopoulos, Iacopo Mochi, Michaela Vockenhuber, Yasin Ekinci, and Dimitrios Kazazis "Mirror-based EUV interference lithography: one step closer to the ultimate resolution", Proc. SPIE PC12494, Optical and EUV Nanolithography XXXVI, PC1249406 (30 April 2023); https://doi.org/10.1117/12.2658011
Advertisement
Advertisement
KEYWORDS
Extreme ultraviolet

Lithography

Diffraction gratings

Extreme ultraviolet lithography

Mirrors

Optical lithography

Nanostructures

RELATED CONTENT

EUV lithography reaches 5 nm half-pitch
Proceedings of SPIE (January 01 1900)
Photolithography reaches 6 nm half-pitch using EUV light
Proceedings of SPIE (March 18 2016)
EUCLIDES: the European EUVL program
Proceedings of SPIE (June 25 1999)

Back to Top