High-NA EUV platform realization as next step in EUV technology

Jara Garcia-Santaclara; Rudy Peeters; Jeroen van Dongen; Rob van Ballegoij; Sjoerd Lok; Jan van Schoot; Paul Graeupner; Peter Kuerz; Joerg Mallmann; Greet Stoorms; Peter Vanoppen

doi:10.1117/12.2687756

22 November 2023 High-NA EUV platform realization as next step in EUV technology

Jara Garcia-Santaclara, Rudy Peeters, Jeroen van Dongen, Rob van Ballegoij, Sjoerd Lok, Jan van Schoot, Paul Graeupner, Peter Kuerz, Joerg Mallmann, Greet Stoorms, Peter Vanoppen

Author Affiliations +

Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC1275002 (2023) https://doi.org/10.1117/12.2687756
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

To enable cost-effective scaling of technology nodes and extend Moore’s law for at least another decade, ASML has been developing the High NA EUV platform. With an increase of the numerical aperture (NA) from 0.33NA to 0.55NA, High NA EUV will bring multiple benefits to the semiconductor market, such as reduction of process complexity, yield improvement and higher resolution. This will be done while maximizing 0.33NA(NXE) and 0.55 NA (EXE) platforms commonality, making this an evolutionary step on EUV technology. This paper gives an overview of the progress and status of the first High NA EUV platform, the EXE:5000, through its different development and build phases.

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Jara Garcia-Santaclara, Rudy Peeters, Jeroen van Dongen, Rob van Ballegoij, Sjoerd Lok, Jan van Schoot, Paul Graeupner, Peter Kuerz, Joerg Mallmann, Greet Stoorms, and Peter Vanoppen "High-NA EUV platform realization as next step in EUV technology", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC1275002 (22 November 2023); https://doi.org/10.1117/12.2687756

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KEYWORDS

Extreme ultraviolet

Design and modelling

Extreme ultraviolet lithography

Prototyping

Reticles

Scanners

Semiconducting wafers

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