Paper
13 September 1982 Yield Improvement With Pellicalised Masks In Projection Printing Technology
A. Rangappan, Chuck Kao
Author Affiliations +
Abstract
Photomask limited yields in LSI and VLSI processes are examined in this paper. Mask defects are classified into two catagories i.e., soft and hard mask defects. Theoretical modelling indicates a substantial yield improvement with pellicle protected masks. In 1:1 projection technology soft mask defects are the predominent cause of mask limited yield. Use of pellicles eliminates the effect of soft defects up to 100 microns in size, does not cause a degradation of image quality or dimensional control, prolongs mask life, and saves considerable labour and cost in maintaining high quality masks. Pellicle mounting, inspection, and handling techniques used are described. Very large die with 3 micron, NMOS, Si-gate technology are used to determine the actual yield improvement. Lots were processed using identical sets of masks of which one set was pellicle protected. Defect density at each process step and final probe yield are statistically analysed to show the individual contributions of hard mask defects, soft mask defects, and random process defects to the overall device yield. Actual yield increase data is presented. This pellicle technology is directly applicable to 10:1 stepping exposure systems where high soft mask defect density could be a more severe problem than in 1:1 projection systems.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Rangappan and Chuck Kao "Yield Improvement With Pellicalised Masks In Projection Printing Technology", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); https://doi.org/10.1117/12.933560
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CITATIONS
Cited by 3 scholarly publications and 2 patents.
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KEYWORDS
Pellicles

Photomasks

Semiconducting wafers

Inspection

Yield improvement

Optical lithography

Data modeling

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