Silicon-Containing Resists For Bi-Layer Resist Systems

Y. Ohnishi; M. Suzuki; K. Saigo; Y. Saotome; H. Gokan

doi:10.1117/12.947816

18 April 1985 Silicon-Containing Resists For Bi-Layer Resist Systems

Y. Ohnishi, M. Suzuki, K. Saigo, Y. Saotome, H. Gokan

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947816
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

Several kinds of silicon-containing resist materials for bi-layer resist systems devel-oped in our' Laboratories are reported. For negative working resists, poly(trimethylsilylstyrene-co-chloromethylstyrene) ( P(SiSt-CMS) ) and a mixture of poly(triallylphenylsilane) with bisazide ( TAS ) have been developed. P(SiSt-CMS) was designed for EB or deep UV exposure. TAS suits to use in near UV lithographic tools. For positive working resists, SIPR (a partly trimethylsilyl-methylated resorcinol-formaldehyde resin mixed with naphthoquinonediazide) was developed. Syntheses, lithographic data and applications to bi-layer systems of these resists are given.

Citation Download Citation

Y. Ohnishi, M. Suzuki, K. Saigo, Y. Saotome, and H. Gokan "Silicon-Containing Resists For Bi-Layer Resist Systems", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947816

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available