Photoablation Of Resist Coated Alignment Targets To Improve VLSI Pattern Overlay

David J. Elliott; Kenneth J. Polasko; Bernhard P. Piwczyk; Ernest W. Balch

doi:10.1117/12.940403

1 September 1987 Photoablation Of Resist Coated Alignment Targets To Improve VLSI Pattern Overlay

David J. Elliott, Kenneth J. Polasko, Bernhard P. Piwczyk, Ernest W. Balch

Proceedings Volume 0774, Lasers in Microlithography; (1987) https://doi.org/10.1117/12.940403
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The reduction in VLSI feature dimensions has progressed at a rapid rate. Dynamic memory circuit complexity has doubled every year and a half over the past twenty years. A large percentage of these circuits' complexity improvement can be directly attributed to improved optical exposure tools and photoresist processing.. Optical exposure tools have extended microlithography well into the submicrometer regime by reducing the exposing wavelength and increasing the numerical aperture. Another key factor in extending resolution capabilities and proess latitude is the introduction of higher gamma, resist processes. For example, contrast enhancing materials (CEM) can effectively increase the resist gamma by a factor of two to three.

Citation Download Citation

David J. Elliott, Kenneth J. Polasko, Bernhard P. Piwczyk, and Ernest W. Balch "Photoablation Of Resist Coated Alignment Targets To Improve VLSI Pattern Overlay", Proc. SPIE 0774, Lasers in Microlithography, (1 September 1987); https://doi.org/10.1117/12.940403

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