Metalorganic Chemical Vapor Deposition Of InSb Using Tri-Neopentylindium

J C Chen; W K Chen; Pao-Lo Liu; J Maloney; O T Beachley

doi:10.1117/12.943934

18 May 1988 Metalorganic Chemical Vapor Deposition Of InSb Using Tri-Neopentylindium

J C Chen, W K Chen, Pao-Lo Liu, J Maloney, O T Beachley

Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988) https://doi.org/10.1117/12.943934
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

The metalorganic chemical vapor deposition (MOCVD) of InSb using tri-neopentylindium (InNp3) is reported. The newly synthesized InNp3 has several advantages, e.g., easy to prepare, easy to purify, and non-pyrophoric, over the commonly used tri-ethylindium (TEIn) and tri-methylindium (TMIn). We report the MOCVD growth of InSb using InNp3. The InSb films were examined by double crystal x-ray diffraction, scanning electron microscope (SEM), and x-ray energy dispersive analysis. The results indicate that the deposited InSb films are stoichiometric and single crystal. The crystal quality and surface morphology are comparable to similar films grown from TMIn.

Citation Download Citation

J C Chen, W K Chen, Pao-Lo Liu, J Maloney, and O T Beachley "Metalorganic Chemical Vapor Deposition Of InSb Using Tri-Neopentylindium", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); https://doi.org/10.1117/12.943934

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