Growth And Characterization Of Gallium Arsenide On Sapphire By Molecular Beam Epitaxy

D. Biswas; J-I Chyi; H Morkoc; S. DiVita; G. Kordas

doi:10.1117/12.948181

16 January 1989 Growth And Characterization Of Gallium Arsenide On Sapphire By Molecular Beam Epitaxy

D. Biswas, J-I Chyi, H Morkoc, S. DiVita, G. Kordas

Proceedings Volume 0970, Properties and Characteristics of Optical Glass; (1989) https://doi.org/10.1117/12.948181
Event: 32nd Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1988, San Diego, CA, United States

Abstract

Gallium Arsenide thin films have been successfully grown onto (1102) sapphire substrates by Molecular Beam Epitaxy methods using a graded growth procedure. The initial layers of GaAs were grown at lower growth rates and at lower substrate temperatures, followed by a thicker GaAs layer grown at usual growth rate of 1 pm/h. The films grown at temperature of 585 °C show good surface morphology. Silicon doped GaAs films exhibit n type conductivity and show low temperature photoluminescence band with peak energy at 1.502 eV and line width of about 42 meV.

Citation Download Citation

D. Biswas, J-I Chyi, H Morkoc, S. DiVita, and G. Kordas "Growth And Characterization Of Gallium Arsenide On Sapphire By Molecular Beam Epitaxy", Proc. SPIE 0970, Properties and Characteristics of Optical Glass, (16 January 1989); https://doi.org/10.1117/12.948181

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