Paper
16 January 1989 Infrared Reflectance Measurement Of Ion Implanted Silica
R H Magruder III, S. H. Morgan, R A Weeks, R. Zuhr
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Abstract
Infrared reflectance spectra of silica glass implanted with Ti, Cr, Mn, Fe, and Bi to doses between 0.5 - 6 x 1016 cm-2 have been measured from 5000 cm-1 to 400 cm-1 at room temperature. The ion energy of the implantation was 160 KeV and the current was 10μA. Alterations in reflectance of bands at 1125 and 481 cm-1 in the spectrum of an unimplanted sample of the order of 20% are observed. A band attributed to non-bridging oxygen ions at -1015 cm-1 is observed to increase in intensity with increasing dose for all species. The band at 1125 cm-1 is observed to shift to lower wavenumber with implantation. Bands due to implanted ion-oxygen vibrations were not detected. The magnitudes of the effects on the existing bands were ion specific. This ion specificity is attributed to the differing chemical states of the implanted ions after implantation.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R H Magruder III, S. H. Morgan, R A Weeks, and R. Zuhr "Infrared Reflectance Measurement Of Ion Implanted Silica", Proc. SPIE 0970, Properties and Characteristics of Optical Glass, (16 January 1989); https://doi.org/10.1117/12.948172
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Cited by 5 scholarly publications.
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KEYWORDS
Ions

Silica

Glasses

Reflectivity

Bismuth

Iron

Manganese

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