Thermal Imaging Using Silicon

J. von der Ohe; J. Siebeneck; U. Suckow

doi:10.1117/12.948314

7 December 1988 Thermal Imaging Using Silicon

J. von der Ohe, J. Siebeneck, U. Suckow

Proceedings Volume 0972, Infrared Technology XIV; (1988) https://doi.org/10.1117/12.948314
Event: 32nd Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1988, San Diego, CA, United States

Abstract

On indium doped silicon monolith integrated focal plane arrays with 300 x 200 picture elements were developed. The chip size is 100 mm2, the pixel size 10 μm x 10 μm and the pitch 20 pm in both directions. The picture elements operate with punch through technique (inherent antiblooming) and the read-out structure is a frame transfer design. PtSi Schottky barrier focal plane arrays with 128 x 64 picture elements were developed. To achieve high photoresponse the SBDs are constructed with a thin layer of PtSi separated from an aluminum mirror by a layer of Si3N4. The focal plane arrays show an excellent homogeneity of the responsivity. Quantum efficiencies of several percent are achivied. Test camera systems have been built with PtSi devices and with focal plane array on In doped Si to demonstrate the possibilities of infrared sensors using silicon as the basic material.

Citation Download Citation

J. von der Ohe, J. Siebeneck, and U. Suckow "Thermal Imaging Using Silicon", Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); https://doi.org/10.1117/12.948314

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