InGaN diode pumped Pr:SrF2 laser at 639 nm wavelength

Martin Fibrich; Maxim Doroshenko; Jan Šulc; Vasilii Konyushkin; Andrei Nakladov; Helena Jelínková

doi:10.1117/12.2251955

17 February 2017 InGaN diode pumped Pr:SrF₂ laser at 639 nm wavelength

Martin Fibrich, Maxim Doroshenko, Jan Šulc, Vasilii Konyushkin, Andrei Nakladov, Helena Jelínková

Proceedings Volume 10082, Solid State Lasers XXVI: Technology and Devices; 1008220 (2017) https://doi.org/10.1117/12.2251955
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

We report on Pr:SrF₂ single crystal laser operation at 639nm wavelength under blue laser diode pumping. The laser system was operated in the pulsed regime at 100 Hz repetition rate and 2 ms pulse duration. Using 3.5W InGaN laser diode as a pump source, 6mW of the mean output power at 639nm was extracted from the Pr:SrF₂ sample. The corresponding slope efficiency related to the absorbed mean power was 16.4 %.

Citation Download Citation

Martin Fibrich, Maxim Doroshenko, Jan Šulc, Vasilii Konyushkin, Andrei Nakladov, and Helena Jelínková "InGaN diode pumped Pr:SrF₂ laser at 639 nm wavelength", Proc. SPIE 10082, Solid State Lasers XXVI: Technology and Devices, 1008220 (17 February 2017); https://doi.org/10.1117/12.2251955

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