Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

Thomas R. O'Brien; Benjamin Kesler; John M. Dallesasse

doi:10.1117/12.2253396

25 February 2017 Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

Thomas R. O'Brien, Benjamin Kesler, John M. Dallesasse

Author Affiliations +

Proceedings Volume 10122, Vertical-Cavity Surface-Emitting Lasers XXI; 101220N (2017) https://doi.org/10.1117/12.2253396
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

Conference Presentation

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Thomas R. O'Brien, Benjamin Kesler, and John M. Dallesasse "Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering", Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220N (25 February 2017); https://doi.org/10.1117/12.2253396

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