Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner

Mark van de Kerkhof; Hans Jasper; Leon Levasier; Rudy Peeters; Roderik van Es; Jan-Willem Bosker; Alexander Zdravkov; Egbert Lenderink; Fabrizio Evangelista; Par Broman; Bartosz Bilski; Thorsten Last

doi:10.1117/12.2258025

24 March 2017 Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner

Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, Thorsten Last

Author Affiliations +

Proceedings Volume 10143, Extreme Ultraviolet (EUV) Lithography VIII; 101430D (2017) https://doi.org/10.1117/12.2258025
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

With the introduction of its fifth-generation EUV scanner, the NXE:3400B, ASML has brought EUV to High-Volume Manufacturing for sub-10nm node lithography. This paper presents lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour (or wph).

Advances in source power have enabled a further increase of tool productivity requiring an associated increase of stage scan speeds. To maximize the number of yielding die per day a stringent Overlay, Focus, and Critical Dimension (CD) control is required. Tight CD control at improved resolution is obtained through a number of innovations: the NXE:3400B features lower aberration levels and a revolutionary new illumination system, offering improved pupil-fill ratio and larger sigma range. Overlay and Focus are further improved by implementation of a new wafer clamp and improved scanner controls.

The NXE:3400B also offers full support for reticle pellicles.

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Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, and Thorsten Last "Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430D (24 March 2017); https://doi.org/10.1117/12.2258025

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