Presentation + Paper
28 March 2017 Wide-range directed self-assembly lithography enabling wider range of applicable pattern size for both hexagonal multi-hole and line/space
Seiji Morita, Ryuichi Saito, Ryosuke Yamamoto, Norikatsu Sasao, Tomoaki Sawabe, Koji Asakawa, Shinobu Sugimura
Author Affiliations +
Abstract
One of technical issues of directed self-assembly lithography is extremely narrow patterning range. It is really difficult to make not only smaller patterns (pitch of less than 30nm) because of self-assembling limit but also middle patterns (pitch of more than 60nm) because of material synthesis issues. This paper describes wide–range directed self-assembly lithography which enables not only narrow patterns but also wide patterns using newly developed block copolymer. One block of the new block copolymer is easily metalized selectively by metalize technology and it is confirmed that dry etching resistance is markedly improved.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiji Morita, Ryuichi Saito, Ryosuke Yamamoto, Norikatsu Sasao, Tomoaki Sawabe, Koji Asakawa, and Shinobu Sugimura "Wide-range directed self-assembly lithography enabling wider range of applicable pattern size for both hexagonal multi-hole and line/space", Proc. SPIE 10144, Emerging Patterning Technologies, 101440R (28 March 2017); https://doi.org/10.1117/12.2257987
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Directed self assembly

Semiconducting wafers

Lithography

Dry etching

Scanning electron microscopy

Annealing

Optical lithography

Back to Top