The opportunity and challenge of spin coat based nanoimprint lithography

Wooyung Jung; Jungbin Cho; Eunhyuk Choi; Yonghyun Lim; Cheolkyu Bok; Masatoshi Tsuji; Kei Kobayashi; Takuya Kono; Tetsuro Nakasugi

doi:10.1117/12.2257845

21 March 2017 The opportunity and challenge of spin coat based nanoimprint lithography

Wooyung Jung, Jungbin Cho, Eunhyuk Choi, Yonghyun Lim, Cheolkyu Bok, Masatoshi Tsuji, Kei Kobayashi, Takuya Kono, Tetsuro Nakasugi

Author Affiliations +

Proceedings Volume 10144, Emerging Patterning Technologies; 1014412 (2017) https://doi.org/10.1117/12.2257845
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Since multi patterning with spacer was introduced in NAND flash memory¹, multi patterning with spacer has been a promising solution to overcome the resolution limit. However, the increase in process cost of multi patterning with spacer must be a serious burden to device manufacturers as half pitch of patterns gets smaller.^{2, 3} Even though Nano Imprint Lithography (NIL) has been considered as one of strong candidates to avoid cost issue of multi patterning with spacer, there are still negative viewpoints; template damage induced from particles between template and wafer, overlay degradation induced from shear force between template and wafer, and throughput loss induced from dispensing and spreading resist droplet. Jet and Flash Imprint Lithography (J-FIL^{4, 5, 6}) has contributed to throughput improvement, but still has these above problems. J-FIL consists of 5 steps; dispense of resist droplets on wafer, imprinting template on wafer, filling the gap between template and wafer with resist, UV curing, and separation of template from wafer. If dispensing resist droplets by inkjet is replaced with coating resist at spin coater, additional progress in NIL can be achieved. Template damage from particle can be suppressed by thick resist which is spin-coated at spin coater and covers most of particles on wafer, shear force between template and wafer can be minimized with thick resist, and finally additional throughput enhancement can be achieved by skipping dispense of resist droplets on wafer. On the other hand, spin-coat-based NIL has side effect such as pattern collapse which comes from high separation energy of resist. It is expected that pattern collapse can be improved by the development of resist with low separation energy.

Citation Download Citation

Wooyung Jung, Jungbin Cho, Eunhyuk Choi, Yonghyun Lim, Cheolkyu Bok, Masatoshi Tsuji, Kei Kobayashi, Takuya Kono, and Tetsuro Nakasugi "The opportunity and challenge of spin coat based nanoimprint lithography", Proc. SPIE 10144, Emerging Patterning Technologies, 1014412 (21 March 2017); https://doi.org/10.1117/12.2257845

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Particles

Nanoimprint lithography

Semiconducting wafers

Optical lithography

Coating

Lithography

Ultraviolet radiation

Show All Keywords

Keywords/Phrases

Search In:

Publication Years