A numeric model for the imaging mechanism of metal oxide EUV resists

W. D. Hinsberg; S. Meyers

doi:10.1117/12.2260265

27 March 2017 A numeric model for the imaging mechanism of metal oxide EUV resists

W. D. Hinsberg, S. Meyers

Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 1014604 (2017) https://doi.org/10.1117/12.2260265
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

A numeric model is proposed describing the chemical and physical mechanisms governing image formation in metaloxide (MOx) EUV photoresist systems. Experimental measurements of physical and chemical properties are used to develop a quantitative representation of the chemical and physical state of the MOx resist film at each step in the lithographic process. The role of radiation-induced condensation to drive non-linear changes in development rate is elucidated. Lithographic performance parameters are predicted and compared with experimental results.

Citation Download Citation

W. D. Hinsberg and S. Meyers "A numeric model for the imaging mechanism of metal oxide EUV resists", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014604 (27 March 2017); https://doi.org/10.1117/12.2260265

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