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16 October 2017 EUV exposure tool stability at IMEC (Conference Presentation)
Vinayan Menon, Raul Pecharroman-Gallego, Lieve van Look , Eric Hendrickx, Andre van Dijk, Tom Lathouwers
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Proceedings Volume 10450, International Conference on Extreme Ultraviolet Lithography 2017; 1045015 (2017) https://doi.org/10.1117/12.2281623
Event: SPIE Photomask Technology and EUV Lithography, 2017, Monterey, California, United States
Abstract
Source challenges have prolonged EUVL insertion into high volume chip production. Though recent years have seen much faster pace mitigation of key detractors. In meantime ASML’s first production platform NXE3300B continues to positively support imec’s core Advanced Lithography Program and Advanced Patterning Center. This presentation discusses source instability challenges addressed that impacted availability & power under UP2 configuration. Collector degradation caused illumination pupil pixel loss but remained within expected levels. Long term exposure tool monitoring data indicates production sustainable capability for EUV dose variability & CDU. Lens aberration, focus & overlay issues unique to EUV addressed will also be discussed.
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Vinayan Menon, Raul Pecharroman-Gallego, Lieve van Look , Eric Hendrickx, Andre van Dijk, and Tom Lathouwers "EUV exposure tool stability at IMEC (Conference Presentation)", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045015 (16 October 2017); https://doi.org/10.1117/12.2281623
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KEYWORDS
Extreme ultraviolet
Extreme ultraviolet lithography
Lithography
EUV optics
High volume manufacturing
Lithographic illumination
Manufacturing
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