EUVL back-insertion layout optimization

D. Civay; E. Laffosse; A. Chesneau

doi:10.1117/12.2297122

19 March 2018 EUVL back-insertion layout optimization

D. Civay, E. Laffosse, A. Chesneau

Proceedings Volume 10583, Extreme Ultraviolet (EUV) Lithography IX; 1058313 (2018) https://doi.org/10.1117/12.2297122
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) is targeted for front-up insertion at advanced technology nodes but will be evaluated for back insertion at more mature nodes. EUVL can put two or more mask levels back on one mask, depending upon what level(s) in the process insertion occurs. In this paper, layout optimization methods are discussed that can be implemented when EUVL back insertion is implemented. The layout optimizations can be focused on improving yield, reliability or density, depending upon the design needs. The proposed methodology modifies the original two or more colored layers and generates an optimized single color EUVL layout design.

Citation Download Citation

D. Civay, E. Laffosse, and A. Chesneau "EUVL back-insertion layout optimization", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058313 (19 March 2018); https://doi.org/10.1117/12.2297122

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