Presentation
19 March 2018 DSA process characterization using BSE metrology (Conference Presentation)
Remi Le Tiec, Shimon Levi, Ahmed Gharbi, Maxime Argoud, Raluca Tiron, Gaelle Chamiot Maitral, Stephane Rey
Author Affiliations +
Abstract
Incorporated in relevant design of guiding templates, DSA (Direct Self Assembly) patterning offers a cost-effective manufacturing method to support pattern shrink for advanced technology nodes. The physical characteristics of the BCP moieties and the self-assembly process, pose unique 3D metrology challenges. Pattern fidelity issues of DSA caused by dislocations, forms residual later that can impact pattern fidelity after Etch. Addressing this challenge can assist the R&D groups to monitor material and process quality to meet patterning specifications. In this paper, we highlight the usage of BSE (Back Scattered Electron) metrology as an innovative approach to characterize the DSA process. Experimental data demonstrate the possibility to characterize the polymer residual layer quality and even assess its thickness for the pattern etch transfer. The quality of the information brought by the BSE imaging make it a must-have to quantify the bottom opening for processed of DSA techniques of pitch multiplication and shrink, from which are not visible with conventional SEM images.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Remi Le Tiec, Shimon Levi, Ahmed Gharbi, Maxime Argoud, Raluca Tiron, Gaelle Chamiot Maitral, and Stephane Rey "DSA process characterization using BSE metrology (Conference Presentation)", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 1058610 (19 March 2018); https://doi.org/10.1117/12.2299634
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KEYWORDS
Directed self assembly

Metrology

Etching

Optical lithography

3D metrology

Image processing

Manufacturing

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