Core-shell p-i-n GaN nanowire LEDs by N-polar selective area growth

Matt D. Brubaker; Kristen L. Genter; Joel C. Weber; Bryan T. Spann; Alexana Roshko; Paul T. Blanchard; Todd E. Harvey; Kris A. Bertness

doi:10.1117/12.2322832

11 September 2018 Core-shell p-i-n GaN nanowire LEDs by N-polar selective area growth

Matt D. Brubaker, Kristen L. Genter, Joel C. Weber, Bryan T. Spann, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Kris A. Bertness

Author Affiliations +

Proceedings Volume 10725, Low-Dimensional Materials and Devices 2018; 1072502 (2018) https://doi.org/10.1117/12.2322832
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and highaspect-ratio n-type NW cores that were not subject to self-shadowing effects during the subsequent growth of a conformal low-temperature Mg:GaN shell. LED devices were fabricated from single-NW and multiple-NW arrays in their as-grown configuration by contacting the n-type core through an underlying conductive GaN layer and the p-type NW shell via a metallization layer. The NW LEDs exhibited rectifying I-V characteristics with a sharp turn-on voltage near the GaN bandgap and low reverse bias leakage current. Under forward bias, the NW LEDs produced electroluminescence with a peak emission wavelength near 380 nm and exhibited a small spectral blueshift with increasing current injection, both of which are consistent with electron recombination in the p-type shell layer through donor-acceptor-pair recombination. These core-shell NW devices demonstrate N-polar selective area growth as an effective technique for producing on-chip nanoscale light sources.

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Matt D. Brubaker, Kristen L. Genter, Joel C. Weber, Bryan T. Spann, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, and Kris A. Bertness "Core-shell p-i-n GaN nanowire LEDs by N-polar selective area growth", Proc. SPIE 10725, Low-Dimensional Materials and Devices 2018, 1072502 (11 September 2018); https://doi.org/10.1117/12.2322832

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