Metrological Electron Microscope for the Certification of Magnification and Linewidth Artifacts for the Semiconductor Industry

Michael T. Postek; William J. Keery; Samuel Jones

doi:10.1117/12.953077

19 July 1989 Metrological Electron Microscope for the Certification of Magnification and Linewidth Artifacts for the Semiconductor Industry

Michael T. Postek, William J. Keery, Samuel Jones

Author Affiliations +

Proceedings Volume 1087, Integrated Circuit Metrology, Inspection, and Process Control III; (1989) https://doi.org/10.1117/12.953077
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

The National Institute of Standards and Technology has, for several years, been developing a metrological electron microscope system traceable to national standards of length. This metrology instrument will certify standards for the calibration of the magnification of scanning electron microscopes (SEM) and for the certification of artifacts for SEM linewidth measurement. These artifacts are not only directed to instruments used in the semiconductor community but will also be useful for the various other applications to which the SEM is currently being used. The SEM-based metrology system now operational at the Institute will be described as well as its design criteria and procedures for its characterization. The design and criteria for a new lithographically produced SEM low-accelerating-voltage magnification standard to be calibrated on this system will also be presented.

Citation Download Citation

Michael T. Postek, William J. Keery, and Samuel Jones "Metrological Electron Microscope for the Certification of Magnification and Linewidth Artifacts for the Semiconductor Industry", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953077

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