BaTiO3-based modulators for integrated optical interconnects

Felix Eltes; Jean Fompeyrine; Stefan Abel

doi:10.1117/12.2511464

4 March 2019 BaTiO₃-based modulators for integrated optical interconnects

Felix Eltes, Jean Fompeyrine, Stefan Abel

Proceedings Volume 10924, Optical Interconnects XIX; 109240Z (2019) https://doi.org/10.1117/12.2511464
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Silicon based photonic integrated circuits (Si-PIC) are becoming a key contender for data center related transceivers. Available Si-PIC platforms use fast and well-integrated modulators based on the plasma-dispersion effect. However, they intrinsically suffer from high-loss and coupled amplitude and phase modulation. Using the Pockels effect enables highly efficient, low-loss phase shifters without residual amplitude modulation. Hybrid barium titanite (BaTiO₃) Siphotonics technology with a strong Pockels effect on large-scale silicon substrates has emerged as a platform to implement such devices. The platform enables scalable, integrated Si-BaTiO₃ devices with large Pockels coefficients for electro-optic modulation. Based on this platform, various electro-optic devices such as low-power tuning elements, monolithically integrated Si-BaTiO₃ modulators, and ultra-compact plasmonic BaTiO₃ modulators have been demonstrated.

Citation Download Citation

Felix Eltes, Jean Fompeyrine, and Stefan Abel "BaTiO₃-based modulators for integrated optical interconnects", Proc. SPIE 10924, Optical Interconnects XIX, 109240Z (4 March 2019); https://doi.org/10.1117/12.2511464

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