Presentation + Paper
26 March 2019 Localized power spectral density analysis on atomic force microscopy images for advanced patterning applications
Alain Moussa, Mohamed Saib, Sara Paolillo, Frederic Lazzarino, Andrea Illiberi, Shaoren Deng, Jan Willem Maes, Anne-Laure Charley, Philippe Leray
Author Affiliations +
Abstract
Power Spectral Density (PSD) is now a standard analysis for pattern roughness process control in advanced patterning. Due to PSD analysis sensitivity coupled with Scanning Electron Microscopy (SEM), line edge roughness (LER) and line width roughness (LWR) are more understood. However, this is applied on sides of the line, and has limited information about roughness on top of the pattern. On the other hand, Atomic force microscopy (AFM) measure accurately the topography of pattern and even if this metrology is probe size dependent, the top of the patterned lines is well revealed when trenches are too narrow to be measured. In this work, we have adapted and applied the PSD analysis on patterned lines measured by AFM. Specific algorithm has been developed to localize the analysis on top of the line. This allow us to report on the effect of processes, such EUV resist smoothening and Area Selective Deposition (ASD).
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alain Moussa, Mohamed Saib, Sara Paolillo, Frederic Lazzarino, Andrea Illiberi, Shaoren Deng, Jan Willem Maes, Anne-Laure Charley, and Philippe Leray "Localized power spectral density analysis on atomic force microscopy images for advanced patterning applications", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109591O (26 March 2019); https://doi.org/10.1117/12.2515178
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KEYWORDS
Atomic force microscopy

Image processing

Photoresist processing

Statistical analysis

Signal processing

Scanning electron microscopy

Image analysis

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