Design principles for efficient singlet fission in anthracene-based organic semiconductors

Youn Jue Bae; Joseph A. Christensen; Gyeongwon Kang; Christos D. Malliakas; Jiawang Zhou; Jordan N. Nelson; Ryan M. Young; Yi-Lin Wu; Richard P. Van Duyne; George C. Schatz; Michael R. Wasielewski

doi:10.1117/12.2527346

9 September 2019 Design principles for efficient singlet fission in anthracene-based organic semiconductors

Youn Jue Bae, Joseph A. Christensen, Gyeongwon Kang, Christos D. Malliakas, Jiawang Zhou, Jordan N. Nelson, Ryan M. Young, Yi-Lin Wu, Richard P. Van Duyne, George C. Schatz, Michael R. Wasielewski

Author Affiliations +

Proceedings Volume 11084, Physical Chemistry of Semiconductor Materials and Interfaces XVIII; 110840Q (2019) https://doi.org/10.1117/12.2527346
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

Singlet fission (SF) in two or more electronically coupled organic chromophores converts a high-energy singlet exciton into two low-energy triplet excitons, which can be used to increase solar cell efficiency. Many known SF chromophores are unsuitable for device applications due to chemical instability and low triplet state energies. This work summarizes structurally dependent SF dynamics for 9,10-bis(phenylethynyl)anthracene (BPEA) and its derivatives in the solid-state using time-resolved optical spectroscopies, and electronic structure calculations. By modulating the packing structure in thin films, we can effectively tune electronic energy and coupling. The systematic study in BPEA organic semiconductors shows that maximizing the thermodynamic driving force can achieve the highest SF rate and efficiency.

Conference Presentation

Citation Download Citation

Youn Jue Bae, Joseph A. Christensen, Gyeongwon Kang, Christos D. Malliakas, Jiawang Zhou, Jordan N. Nelson, Ryan M. Young, Yi-Lin Wu, Richard P. Van Duyne, George C. Schatz, and Michael R. Wasielewski "Design principles for efficient singlet fission in anthracene-based organic semiconductors", Proc. SPIE 11084, Physical Chemistry of Semiconductor Materials and Interfaces XVIII, 110840Q (9 September 2019); https://doi.org/10.1117/12.2527346

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available