Optical And Semiconductor Properties Of Lead Telluride Coatings

K. Q. Zhang; J. S. Seeley; R. Hunneman; G. J. Hawkins

doi:10.1117/12.960798

11 September 1989 Optical And Semiconductor Properties Of Lead Telluride Coatings

K. Q. Zhang, J. S. Seeley, R. Hunneman, G. J. Hawkins

Proceedings Volume 1112, Window and Dome Technologies and Materials; (1989) https://doi.org/10.1117/12.960798
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

The optical and semiconductor properties of lead telluride coatings are dependent on various factors contributing to its performance. In this paper, we will present the temperature dependent effects of single layer lead telluride coatings on the dispersion and absorption characteristics, absorption edge, and carrier concentration from 15 K to 436 K using both experimental and theoretical analysis.

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K. Q. Zhang, J. S. Seeley, R. Hunneman, and G. J. Hawkins "Optical And Semiconductor Properties Of Lead Telluride Coatings", Proc. SPIE 1112, Window and Dome Technologies and Materials, (11 September 1989); https://doi.org/10.1117/12.960798

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