Paper
25 February 2020 Red surface-emitting SLEDs
Bruno Jentzsch, Alvaro Gomez-Iglesias, Alexander Tonkikh, Bernd Witzigmann
Author Affiliations +
Abstract
Surface-emitting InGaAlP SLEDs that are based on in-plane amplification along a horizontal waveguide are demonstrated. Total internal reflection at tilted etched micromirrors are used for the deflection of optical modes normal to the chip surface. Applying a bonding process of the etched wafer onto a new carrier, light can be emitted through the surface that was originally covered by the growth substrate. Depending on the waveguide geometry superluminescence as well as lasing operation is observed. In superluminescence operation an emission spectrum with a FWHM of 10nm centered at 637nm is obtained. The peak output power of the amplified spontaneous emission is up to ~ 200mW which corresponds to a WPE of ~ 6 %. In case of lasing (λ ~ 639 nm) a peak output power larger than 1000mW at a WPE that exceeds 20% is achieved. In addition, an array configuration with radially aligned waveguides that contribute to a common far field is investigated as well.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno Jentzsch, Alvaro Gomez-Iglesias, Alexander Tonkikh, and Bernd Witzigmann "Red surface-emitting SLEDs", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020Y (25 February 2020); https://doi.org/10.1117/12.2541968
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KEYWORDS
Waveguides

Micromirrors

Mirrors

Light emitting diodes

Quantum wells

Semiconductors

Aluminium gallium indium phosphide

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