High-Z metal-based underlayer patterning for improving EUV stochastics (Conference Presentation)

Anuja De Silva; Jennifer Church; Dominik Metzler; Luciana Meli; Nelson M. Felix; Phil Friddle; Bhaskar Nagabhirava; Siva Kanakasabapathy; Rich Wise

doi:10.1117/12.2551319

24 March 2020 High-Z metal-based underlayer patterning for improving EUV stochastics (Conference Presentation)

Anuja De Silva, Jennifer Church, Dominik Metzler, Luciana Meli, Nelson M. Felix, Phil Friddle, Bhaskar Nagabhirava, Siva Kanakasabapathy, Rich Wise

Author Affiliations +

Proceedings Volume 11323, Extreme Ultraviolet (EUV) Lithography XI; 113230M (2020) https://doi.org/10.1117/12.2551319
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Extending extreme ultraviolet (EUV) single exposure patterning to its limits is dependent on eliminating its stochastic defectivity. Along with developments in photoresist platforms, the patterning film stack also needs to be considered. The material immediately underneath the photoresist is expected to have significant impact on both lithographic and pattern transfer performance. By designing the resist substrate interface with high EUV absorbance, there is potential to increase the EUV quantum yield of the exposure process. Increasing the selectivity to organic layer offers the opportunity to modulate stochastic defects through etch strategies. This paper will demonstrate the patterning of various chemically amplified resists on a high-Z metal-based hardmask. The potential for dose reduction, higher etch selectivity, and defectivity improvement from a high-Z hardmask will be discussed. Deposition-trim etch techniques will be used for decreasing the transfer of stochastic defects to the underlying substrate. Sub-32nm pitch trench patterning, defectivity, and electrical yield for this patterning stack will be highlighted.

Conference Presentation

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Anuja De Silva, Jennifer Church, Dominik Metzler, Luciana Meli, Nelson M. Felix, Phil Friddle, Bhaskar Nagabhirava, Siva Kanakasabapathy, and Rich Wise "High-Z metal-based underlayer patterning for improving EUV stochastics (Conference Presentation)", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230M (24 March 2020); https://doi.org/10.1117/12.2551319

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KEYWORDS

Optical lithography

Stochastic processes

Extreme ultraviolet

Etching

Extreme ultraviolet lithography

Photoresist materials

Absorbance

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