Impact of flare on source mask optimization in EUVL for 7nm technology node

Lisong Dong; Rui Chen; Taian Fan; Rongbo Zhao; Yayi Wei; Jianjun Jia; Zac Levinson; Thuc Dam; Jay Lee; Yongdong Wang; Larry Melvin

doi:10.1117/12.2552008

23 March 2020 Impact of flare on source mask optimization in EUVL for 7nm technology node

Lisong Dong, Rui Chen, Taian Fan, Rongbo Zhao, Yayi Wei, Jianjun Jia, Zac Levinson, Thuc Dam, Jay Lee, Yongdong Wang, Larry Melvin

Author Affiliations +

Proceedings Volume 11323, Extreme Ultraviolet (EUV) Lithography XI; 113232E (2020) https://doi.org/10.1117/12.2552008
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

In EUV lithography, the short wavelength and residual mirror surface roughness increase the flare levels across the slit. As a key research point, the flares of different exposure fields are carefully discussed by numerical simulation. To ensure the effectiveness and practicability of our simulations, the test patterns are generated according to the general design rules for 7nm technology node. The NILS, process variation band (PVB) and MEEFs from mask optimizations and source mask optimizations (SMO) results are compared. From the comparisons, the constant flare has a greater influence on NILS and PVB than that on MEEF. In contrast, the flare map caused more reduction on the MEEF values.

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Lisong Dong, Rui Chen, Taian Fan, Rongbo Zhao, Yayi Wei, Jianjun Jia, Zac Levinson, Thuc Dam, Jay Lee, Yongdong Wang, and Larry Melvin "Impact of flare on source mask optimization in EUVL for 7nm technology node", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113232E (23 March 2020); https://doi.org/10.1117/12.2552008

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