Contribution ratio of process fidelity and beam accuracy in multi-beam mask writing

Rumi Ito; Yoshinori Kojima; Hiroshi Matsumoto

doi:10.1117/12.2551847

23 March 2020 Contribution ratio of process fidelity and beam accuracy in multi-beam mask writing

Rumi Ito, Yoshinori Kojima, Hiroshi Matsumoto

Proceedings Volume 11324, Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020; 113241A (2020) https://doi.org/10.1117/12.2551847
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

We investigated the contribution ratio of process fidelity and beam accuracy in patterning with the multi-beam mask writing system. A beam pitch-related line edge profile may occur, which impacts on line edge roughness (LER) in the multi-beam writing system. The printability of beam image into the final etched pattern depends on the mask process, therefore, we need to understand quantitatively the printability of beam placement errors on LER with the actual mask process. We examined how the patterning characteristics are modified in each step of the mask process. The printability of beam placement errors largely depend on the period of errors, rather than the amplitude of errors. These results can optimize the writing strategy in multi-beam mask writing.

Citation Download Citation

Rumi Ito, Yoshinori Kojima, and Hiroshi Matsumoto "Contribution ratio of process fidelity and beam accuracy in multi-beam mask writing", Proc. SPIE 11324, Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020, 113241A (23 March 2020); https://doi.org/10.1117/12.2551847

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