The EBM-8000P has two models, the EBM-8000P/H, which is equivalent to the conventional EBM-8000, and the EBM-8000P/M, which aims for high throughput. The mask-writing throughput depends largely on the beam shot size and the current density, based on the generation of mask nodes. The EBM-8000P/M achieves high throughput and enough accuracy for 45-20 node by enlarging the maximum shot size while maintaining a current density of 400A/cm2. Therefore, it is possible to achieve throughput that is 1.5 to 2 times faster than the conventional 70A/cm2 mask writer (such as EBM-6000) which is for 45-20nm node. |
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Photomasks
Electron beams
Critical dimension metrology
Beam shaping