OPO residuals reduction with imaging metrology color per layer mode

Shlomit Katz; Honggoo Lee; Dongyoung Lee; Jinsoo Kim; Jaesun Woo; Chunsoo Kang; Chanha Park; Dohwa Lee; Seongjae Lee; Sanghuck Jeon; Dongsub Choi; Anna Golotsvan; Roie Volkivich; Efi Megged

doi:10.1117/12.2541933

20 March 2020 OPO residuals reduction with imaging metrology color per layer mode

Shlomit Katz, Honggoo Lee, Dongyoung Lee, Jinsoo Kim, Jaesun Woo, Chunsoo Kang, Chanha Park, Dohwa Lee, Seongjae Lee, Sanghuck Jeon, Dongsub Choi, Anna Golotsvan, Roie Volkivich, Efi Megged

Author Affiliations +

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 113252E (2020) https://doi.org/10.1117/12.2541933
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

As the semiconductor industry rapidly approaches the 3nm lithography node, on product overlay (OPO) requirements have become tighter and as a result, residuals magnitude requirements have become even more challenging. Metrology performance enhancements are required to meet these demands. Color Per Layer (CPL) is a unique imaging overlay metrology approach that enables the measurement of each layer with individually-optimized wavelength and focus position. CPL allows the user to custom-define the most suitable conditions per layer, thereby ensuring optimal performance. Imaging-based overlay (IBO) utilizes CPL in order to overcome inaccuracies due to interactions between bottom and top layers. These layers are fundamentally different in that the top grating is usually the photoresist layer, but the bottom grating can be any process layer. Therefore, optimizing the conditions for each layer will maximize measurement accuracy. KLA’s Archer™ 700 metrology tool addresses these metrology challenges by putting CPL to use, where the Wave Tuner (WT) allows the user to select a specific wavelength. This paper presents this novel CPL approach and discusses its reduction in OPO and contrast, and reviews use cases from DRAM and 3D NAND. We will present the results from these case studies, focusing on SK Hynix DRAM production wafers.

Citation Download Citation

Shlomit Katz, Honggoo Lee, Dongyoung Lee, Jinsoo Kim, Jaesun Woo, Chunsoo Kang, Chanha Park, Dohwa Lee, Seongjae Lee, Sanghuck Jeon, Dongsub Choi, Anna Golotsvan, Roie Volkivich, and Efi Megged "OPO residuals reduction with imaging metrology color per layer mode", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113252E (20 March 2020); https://doi.org/10.1117/12.2541933

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available