Optical Properties Of Microwave-Plasma-Assisted-CVD Diamond Film

Curtis E. Johnson; Wayne A. Weimer

doi:10.1117/12.962076

15 January 1989 Optical Properties Of Microwave-Plasma-Assisted-CVD Diamond Film

Curtis E. Johnson, Wayne A. Weimer

Proceedings Volume 1146, Diamond Optics II; (1989) https://doi.org/10.1117/12.962076
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Infrared spectra were obtained from diamond films grown on Si wafers by microwave plasma assisted chemical vapor deposition. The transmission of a 3-μm thick film varied from near 60% at 5000 cm^-1 to near 73% at 1000 cm^-1. Infrared spectra were fit with simulated spectra to determine values for thickness, index of refraction, and surface roughness or thickness variation. Impurity peaks at 2925-2830 cm^-1 and 3325 cm^-1 were assigned to sp³ carbon CH₂ or CH groups and sp carbon CH groups, respectively.

Citation Download Citation

Curtis E. Johnson and Wayne A. Weimer "Optical Properties Of Microwave-Plasma-Assisted-CVD Diamond Film", Proc. SPIE 1146, Diamond Optics II, (15 January 1989); https://doi.org/10.1117/12.962076

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