Properties Of Low Temperature Plasma CVD Diamond Films

Alan B. Harker

doi:10.1117/12.962072

15 January 1989 Properties Of Low Temperature Plasma CVD Diamond Films

Alan B. Harker

Proceedings Volume 1146, Diamond Optics II; (1989) https://doi.org/10.1117/12.962072
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

In the microwave plasma deposition (PECVD) of diamond from methane, the variables available for controlling the microstructure of the resulting films are the plasma composition and density, the substrate surface properties, and the temperature. It has been demonstrated that the competition between nucleation site formation and the rate of reactive plasma etching is the critical feature in the development of the film microstructure. Through reducing the deposition temperature and enhancing the etching rates of sp2 carbon, fine grained optical quality diamond films have been produced.

Citation Download Citation

Alan B. Harker "Properties Of Low Temperature Plasma CVD Diamond Films", Proc. SPIE 1146, Diamond Optics II, (15 January 1989); https://doi.org/10.1117/12.962072

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