Effect of UV-Ozone annealing on the transient characteristics of ZnMgO thin film UV-Vis photodetector

Md Jawaid Alam; Madhuri Mishra; Punam Murkute; Sushama Sushama; Hemant Ghadi; Subhananda Chakrabarti

doi:10.1117/12.2569020

21 August 2020 Effect of UV-Ozone annealing on the transient characteristics of ZnMgO thin film UV-Vis photodetector

Md Jawaid Alam, Madhuri Mishra, Punam Murkute, Sushama Sushama, Hemant Ghadi, Subhananda Chakrabarti

Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 114651G (2020) https://doi.org/10.1117/12.2569020
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Conference Poster

Abstract

ZnMgO is extensively being used in UV based optoelectronic applications owing to its high bandgap and excitonic emissions at room temperature. In many applications, UV-Vis detection is required such as spectroscopy, medical applications and plasmonics. ZnMgO film and silicon can work in parallel to give a broad UV-Vis response. We fabricated ZnMgO/Si UV-Vis photo detector. UV-Ozone annealing can be used to increase the responsivity due to an increase in photoconductive gain. Here in this report, we have shown the effect of UV-Ozone on the transient behavior of the photodetector. The calculated responsivity values for 300 nm, 400 nm and white light were 3 A/W, 95 A/W and 50 A/W respectively. After UV-Ozone corresponding responsivity increased to 5 A/W, 180 A/W and 105 A/W respectively. The transient response of the photodetector was measured for asfabricated and UV-Ozone annealing. The transient behavior was fitted into two time constant of rise and fall time and switching parameters at 300 nm, 400 nm and white light are compared. The lesser time constant indicates carrier generation and recombination and the larger time constant is related with traps capture and release process. Rise time for 300 nm, 400 nm and white light was estimated to be 100, 10 and 8 ms respectively and the corresponding fall times were 140, 45 and 40 ms. Rise time for 300 nm illumination decreased from 100 to 70 ms after UV-Ozone.

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Citation Download Citation

Md Jawaid Alam, Madhuri Mishra, Punam Murkute, Sushama Sushama, Hemant Ghadi, and Subhananda Chakrabarti "Effect of UV-Ozone annealing on the transient characteristics of ZnMgO thin film UV-Vis photodetector", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114651G (21 August 2020); https://doi.org/10.1117/12.2569020

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