Enhancing lithographic performance by new EUV photomask materials

Supriya L. Jaiswal

doi:10.1117/12.2586382

22 February 2021 Enhancing lithographic performance by new EUV photomask materials

Supriya L. Jaiswal

Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090F (2021) https://doi.org/10.1117/12.2586382
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Next generation high volume EUV manufacturing for 7, 5 and 3 nm nodes drives advanced performance in material design, specification and selection. Materials are currently adapted for ever increasingly complex lithographic design with tight tolerances; some trade-offs leading to sub-optimal performance. We consider a new class of materials for the EUV photomask and optics that have the potential for advanced lithographic performance. The overarching factors that drive adoption include performance, lifetime, manufacturability, cost of operations and cost of consumables. As such any new selection in materials must demonstrate robustness against these specifications. Astrileux is sponsored by National Science Foundation and CASIS.

Conference Presentation

Citation Download Citation

Supriya L. Jaiswal "Enhancing lithographic performance by new EUV photomask materials", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090F (22 February 2021); https://doi.org/10.1117/12.2586382

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