Self-referenced and self-calibrated MoiréOVL target design and applications

Cheuk Wun Wong; Neelima Rathi; Taher Kagalwala; Karsten Gutjahr; Patrick Snow; Tony Joung; Tam Vuong; Apollo Marmarinos; Gorby Wan

doi:10.1117/12.2583733

22 February 2021 Self-referenced and self-calibrated MoiréOVL target design and applications

Cheuk Wun Wong, Neelima Rathi, Taher Kagalwala, Karsten Gutjahr, Patrick Snow, Tony Joung, Tam Vuong, Apollo Marmarinos, Gorby Wan

Author Affiliations +

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 1161122 (2021) https://doi.org/10.1117/12.2583733
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

This paper presents a new overlay metrology target design and scheme referred as MoiréOVLTM. It utilizes Moiré patterns of two overlapping gratings to amplify the kernel response to overlay misalignment and thereby has the potential to enhance kernel sensitivity, detectability and measurement accuracy. A Self-referenced (SR) MoiréOVL design scheme, which enables MoiréOVL to be measured with existing image-based overlay tools is proposed and evaluated on a contact layer. This paper demonstrated the feasibility of SR-MoiréOVL on existing IBO tools. When comparing to the reference SEM-based overlay, a magnification factor of 6.9X with an R² of 0.96 and a calibrated intercept of 0.34nm was observed on wafer. Comparison between MoiréOVL and POR IBO on TIS, residuals, precision and TMU is presented. Lastly we present the idea of a Self-calibrated (SC) MoiréOVL scheme to calibrate the magnification factor on the fly during measurement for enhanced usability.

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Cheuk Wun Wong, Neelima Rathi, Taher Kagalwala, Karsten Gutjahr, Patrick Snow, Tony Joung, Tam Vuong, Apollo Marmarinos, and Gorby Wan "Self-referenced and self-calibrated MoiréOVL target design and applications", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 1161122 (22 February 2021); https://doi.org/10.1117/12.2583733

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