Relaxation of Optically Excited Gallium Arsenide Doping Superlattices

M. S. Tobin; J. D. Bruno; C. A. Pennise

doi:10.1117/12.963328

5 January 1990 Relaxation of Optically Excited Gallium Arsenide Doping Superlattices

M. S. Tobin, J. D. Bruno, C. A. Pennise

Proceedings Volume 1177, Integrated Optics and Optoelectronics; (1990) https://doi.org/10.1117/12.963328
Event: OE/FIBERS '89, 1989, Boston, United States

Abstract

Measurements are reported of the photovoltage decay across a selectively contacted GaAs doping superlattice as a function of time following cw and picosecond laser excitation. The photovoltage decay is measured under conditions where electrons and holes can recombine through an external circuit in parallel with internal recombination mechanisms. Measurements of the intensity dependence of the steady-state photovoltage are also reported.

Citation Download Citation

M. S. Tobin, J. D. Bruno, and C. A. Pennise "Relaxation of Optically Excited Gallium Arsenide Doping Superlattices", Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); https://doi.org/10.1117/12.963328

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