Presentation + Paper
26 May 2022 Calibration of Gaussian random field stochastic EUV models
Author Affiliations +
Abstract
Typical photoresists processes include a small set of photo-chemical reactions, with each reaction represented by many statistically identically distributed and independent instances. These instances eventually combine into the resist deprotection function, resulting, by virtue of the Central Limit Theorem, in Gaussian Random Field deprotection models. We discuss and demonstrate the approaches to calibration of such models, based on experimentally measured edges of lithographic features, their LER, LWR and PSD. We also present, discuss and analyze the phenomenon of “spatial ergodicity” and its effect on proper sampling of edge measurements for stochastic model calibration.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Azat Latypov, Chih-I Wei, Peter De Bisschop, Gurdaman Khaira, and Germain Fenger "Calibration of Gaussian random field stochastic EUV models", Proc. SPIE 12051, Optical and EUV Nanolithography XXXV, 1205105 (26 May 2022); https://doi.org/10.1117/12.2614142
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KEYWORDS
Stochastic processes

Calibration

Line edge roughness

Line width roughness

Extreme ultraviolet

Statistical analysis

Diffusion

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