Influence of diffusion hydrogen on the radiation hardness of silicon devices

E. A Polushkin; S. V. Nefediev; A. V. Kovalchuk; O. A. Soltanovich; S. Yu. Shapoval

doi:10.1117/12.2624184

30 January 2022 Influence of diffusion hydrogen on the radiation hardness of silicon devices

E. A Polushkin, S. V. Nefediev, A. V. Kovalchuk, O. A. Soltanovich, S. Yu. Shapoval

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 1215711 (2022) https://doi.org/10.1117/12.2624184
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

The paper discusses methods for increasing the resistance of silicon semiconductor devices to ionizing radiation. A key feature of the presented methods is that there is no need to modify the topology, i.e. the described technological methods make it possible to increase the stability of integrated circuits by adding some technological operations to the standard process flow (not radiation hardy).

Citation Download Citation

E. A Polushkin, S. V. Nefediev, A. V. Kovalchuk, O. A. Soltanovich, and S. Yu. Shapoval "Influence of diffusion hydrogen on the radiation hardness of silicon devices", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 1215711 (30 January 2022); https://doi.org/10.1117/12.2624184

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available