Aerial image metrology (AIMS) based mask-model accuracy improvement for computational lithography

N. Pandey; S. Hunsche; A. Lyons; J. Chen; R. la Greca; R. Capelli; G. Kersteen

doi:10.1117/12.2641724

1 December 2022 Aerial image metrology (AIMS) based mask-model accuracy improvement for computational lithography

N. Pandey, S. Hunsche, A. Lyons, J. Chen, R. la Greca, R. Capelli, G. Kersteen

Proceedings Volume 12293, Photomask Technology 2022; 122930R (2022) https://doi.org/10.1117/12.2641724
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Conference Poster

Abstract

In this paper, we study the feasibility of direct aerial image measurements with the ZEISS AIMS® EUV tool for quantification of mask effects that impact EPE budget and OPC model accuracy. We demonstrate the application of aerial image metrology for OPC model calibration, pattern shift detection, quantitative mask metrology and for Optical process window characterization.

Citation Download Citation

N. Pandey, S. Hunsche, A. Lyons, J. Chen, R. la Greca, R. Capelli, and G. Kersteen "Aerial image metrology (AIMS) based mask-model accuracy improvement for computational lithography", Proc. SPIE 12293, Photomask Technology 2022, 122930R (1 December 2022); https://doi.org/10.1117/12.2641724

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