Presentation + Paper
16 March 2023 Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD
Author Affiliations +
Proceedings Volume 12422, Oxide-based Materials and Devices XIV; 1242204 (2023) https://doi.org/10.1117/12.2661097
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We demonstrated a metal-organic chemical vapor deposition (MOCVD) of smooth and thick monoclinic phase-pure gallium oxide (Ga2O3) on c-plane sapphires using silicon-oxygen bonding (SiOx) as a phase stabilizer. We were able to grow ~580nm thick β-Ga2O3 on sapphire by MOCVD at 700 oC through phase stabilization using silane. The samples grown with silane show a reduction in the surface roughness and resistivity from 10 nm to 5 nm and from 371 Ω.cm to 136 Ω.cm, respectively. X-ray diffraction (XRD) reveals a pure-monoclinic phase. Our findings indicate that a thick, phase-pure β-Ga2O3 can be grown on c-plane sapphire, which can lead to its growth on thermally conducting substrates which is critical for creating power devices with better thermal management.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohi Uddin Jewel, Samiul Hasan, Scott R. Crittenden, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç, and Iftikhar Ahmad "Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD", Proc. SPIE 12422, Oxide-based Materials and Devices XIV, 1242204 (16 March 2023); https://doi.org/10.1117/12.2661097
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KEYWORDS
Gallium

Annealing

Sapphire

Metalorganic chemical vapor deposition

Silicon

Surface roughness

Thin films

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