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We demonstrated a metal-organic chemical vapor deposition (MOCVD) of smooth and thick monoclinic phase-pure gallium oxide (Ga2O3) on c-plane sapphires using silicon-oxygen bonding (SiOx) as a phase stabilizer. We were able to grow ~580nm thick β-Ga2O3 on sapphire by MOCVD at 700 oC through phase stabilization using silane. The samples grown with silane show a reduction in the surface roughness and resistivity from 10 nm to 5 nm and from 371 Ω.cm to 136 Ω.cm, respectively. X-ray diffraction (XRD) reveals a pure-monoclinic phase. Our findings indicate that a thick, phase-pure β-Ga2O3 can be grown on c-plane sapphire, which can lead to its growth on thermally conducting substrates which is critical for creating power devices with better thermal management.
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Mohi Uddin Jewel, Samiul Hasan, Scott R. Crittenden, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç, Iftikhar Ahmad, "Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD," Proc. SPIE 12422, Oxide-based Materials and Devices XIV, 1242204 (16 March 2023); https://doi.org/10.1117/12.2661097