Paper
15 December 2022 New method to characterize Sb segregation in InAs/GaSb superlattice
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Proceedings Volume 12478, Thirteenth International Conference on Information Optics and Photonics (CIOP 2022); 1247837 (2022) https://doi.org/10.1117/12.2654812
Event: Thirteenth International Conference on Information Optics and Photonics (CIOP 2022), 2022, Xi'an, China
Abstract
Sb segregation is the main contributor to the interfacial asymmetry of the InAs/GaSb superlattices. We reconstructed and quantified the Sb segregation profile in the InAs/Ga(In)Sb superlattice by a one-dimensional model using the postprocessing technique on cross-sectional STM images. The model shows a totally different profile between InAs-on-Ga(In)Sb interface and Ga(In)Sb-on-InAs interface. The asymmetric compositional profile is then added to the 8-band k.p model to investigate its effects on the band structures of the superlattice. With the Sb segregation, the effective band gap of the InAs/GaSb superlattice shifts towards a shorter wavelength. We hope that our work would provide a way to accurately predict the band structures of the InAs/GaSb superlattices by considering the nonideal interfaces.
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Shengwen Xie, Lili Xie, Qiyang Sun, Ruiqing Chai, Ruiming Chen, Faran Chang, and Chengao Yang "New method to characterize Sb segregation in InAs/GaSb superlattice", Proc. SPIE 12478, Thirteenth International Conference on Information Optics and Photonics (CIOP 2022), 1247837 (15 December 2022); https://doi.org/10.1117/12.2654812
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KEYWORDS
Antimony

Interfaces

Superlattices

Scanning tunneling microscopy

Gallium antimonide

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