Thin underlayer materials for metal oxide resist patterning

Satoshi Dei; Yuya Hayashi; Shumpei Akita; Shuhei Yamada; Kazunori Sakai; Tatsuya Kasai; Akitaka Nii; Ayaka Furusawa; Kazuya Takada; Tetsuro Kaneko; Tomoaki Seko; Eiji Yoneda; Tatsuya Sakai

doi:10.1117/12.2657918

30 April 2023 Thin underlayer materials for metal oxide resist patterning

Satoshi Dei, Yuya Hayashi, Shumpei Akita, Shuhei Yamada, Kazunori Sakai, Tatsuya Kasai, Akitaka Nii, Ayaka Furusawa, Kazuya Takada, Tetsuro Kaneko, Tomoaki Seko, Eiji Yoneda, Tatsuya Sakai

Author Affiliations +

Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 124981M (2023) https://doi.org/10.1117/12.2657918
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

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Abstract

We introduce thin underlayer (UL) materials (<10 nm) for metal oxide resist (MOR) that can support the lithography performance requirements as well as compatible with conventional etching tool and etching process. Thin UL materials for MOR patterning applications required to have chemical moieties with specific functions and excellent physical properties to meet both lithography and etching performance requirements. We investigated the relationship between surface properties of thin UL materials and its effects on MOR sensitivity, pattern collapse, and defects. We also discussed plausible mechanism based on our experimental results. In addition, we have also confirmed the impact of high EUV absorption unit effect in UL materials on MOR sensitivity.

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Satoshi Dei, Yuya Hayashi, Shumpei Akita, Shuhei Yamada, Kazunori Sakai, Tatsuya Kasai, Akitaka Nii, Ayaka Furusawa, Kazuya Takada, Tetsuro Kaneko, Tomoaki Seko, Eiji Yoneda, and Tatsuya Sakai "Thin underlayer materials for metal oxide resist patterning", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124981M (30 April 2023); https://doi.org/10.1117/12.2657918

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