Poster + Paper
30 April 2023 Spin speed impact on photoresist thin film properties and EUV lithographic performance
Yinjie Cen, ChoongBong Lee, Li Cui, Suzanne M. Coley, Jong Keun Park, Benjamin D. Naab-Rafael, Emad Aqad, Rochelle Rena, Tyler Paul, Tom Penniman, Jason Behnke, Julia T. Early, Benjamin Foltz
Author Affiliations +
Conference Poster
Abstract
Chemically amplified resist (CAR) materials are widely used in advanced node patterning by extreme ultraviolet lithography (EUVL). To support the continuous requirement of reducing critical dimension (CD), CAR has been designed to process at tens of nanometer coating thickness while taking into consideration film roughness, aspect ratio, and etch transfer challenge. In this study, we investigated the impact of the photoresist’s different spin speed for same film thickness on resolution, line width roughness, and sensitivity (RLS) trade-off for Line and Space (L/S) patterns. We selected photoresists with identical chemical composition that differed only in total wt solid% in the solution. Photoresist films at constant thickness were investigated for the spin speed impacts on photoresist film density, hydrophobicity on the film surface, and film surface roughness. The corresponding EUV lithographic performance will be presented.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yinjie Cen, ChoongBong Lee, Li Cui, Suzanne M. Coley, Jong Keun Park, Benjamin D. Naab-Rafael, Emad Aqad, Rochelle Rena, Tyler Paul, Tom Penniman, Jason Behnke, Julia T. Early, and Benjamin Foltz "Spin speed impact on photoresist thin film properties and EUV lithographic performance", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124981W (30 April 2023); https://doi.org/10.1117/12.2659101
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KEYWORDS
Photoresist materials

Film thickness

Extreme ultraviolet lithography

Lithography

Line width roughness

Thin films

Surface roughness

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