In this work, an innovative noninvasive nickel wire-gated FET glucose sensor with and without graphene film as an intermediate layer was investigated. According to the redox reactions between nickel nanowires and glucose molecules in weak alkaline solutions, electron exchange occurs when Ni (III) reacts with glucose to form Ni (II) and glucolactone. However, the generated electrons are usually neutralized prematurely due to material defects. This study investigates the electrical effects of using graphene as an intermediate layer between Ni nanowires and gate metal. Compared with the glucose FET sensor using nickel nanowires alone as the gate metal, due to the good electrical conductivity of the graphene film under the nickel nanowires in the gate area, the electrons generated by the nickel nanowires catalyzing glucose molecules can quickly dispersed on the metal surface via the graphene film, which will enhance the change of the gate potential, and the sensitivity of the FET glucose detector is further improved. This experiment shows that the detection limit of a transistor-based glucose detector with a nickel nanowire gate is 551.2 μM and 51 nM, respectively, without and with graphene as an intermediate layer.
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